Thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors
β Scribed by Reid, A.R.; Kleckner, T.C.; Jackson, M.K.; Marchesan, D.; Kovacic, S.J.; Long, J.R.
- Book ID
- 114538748
- Publisher
- IEEE
- Year
- 2001
- Tongue
- English
- Weight
- 70 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0018-9383
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In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well
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