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Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors

✍ Scribed by D. Knoll; B. Heinemann; D. Bolze; K. E. Ehwald; G. Fischer; D. Krüger; T. Morgenstern; E. Naumann; P. Schley; B. Tillack; D. Wolansky

Book ID
107457754
Publisher
Springer US
Year
1998
Tongue
English
Weight
165 KB
Volume
27
Category
Article
ISSN
0361-5235

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Effect of Ge content and profile in the
Effect of Ge content and profile in the SiGe base on the performance of a SiGe/Si heterojunction bipolar transistor
✍ Mukul K. Das; N. R. Das; P. K. Basu 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well