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Effect of bandgap gradient in the base region of SiGe heterojunction bipolar transistors

✍ Scribed by David J. Roulston; Joel M. McGregor

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
151 KB
Volume
35
Category
Article
ISSN
0038-1101

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In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well

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