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The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors

✍ Scribed by Shafi, Z.A.; Gibbings, C.J.; Ashburn, P.; Post, I.R.C.; Tuppen, C.G.; Godfrey, D.J.

Book ID: 114534463
Publisher: IEEE
Year: 1991
Tongue: English
Weight: 445 KB
Volume: 38
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.119045

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