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On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors

✍ Scribed by Borgarino, M.; Tartarin, J.G.; Kuchenbecker, J.; Parra, T.; Lafontaine, H.; Kovacic, T.; Plana, R.; Graffeuil, J.

Book ID
114561946
Publisher
IEEE
Year
2000
Tongue
English
Weight
56 KB
Volume
10
Category
Article
ISSN
1051-8207

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Effect of Ge content and profile in the
Effect of Ge content and profile in the SiGe base on the performance of a SiGe/Si heterojunction bipolar transistor
✍ Mukul K. Das; N. R. Das; P. K. Basu πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well