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Preparation of hexagonal boron nitride by low pressure chemical vapour deposition in the BBr3+ NH3+ H2system

✍ Scribed by Byung Jin Choi; Dong Won Park; Dai Ryong Kim


Publisher
Springer
Year
1995
Tongue
English
Weight
272 KB
Volume
14
Category
Article
ISSN
0261-8028

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A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroΓ‘uoric acid (BHF) were investigated using Ruth