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Silicon nitride elaborated by low pressure chemical vapour deposition from Si2H6 and NH3 at low temperature

✍ Scribed by E. Scheid; L.K. Kouassi; R. Henda; J. Samitier; J.R. Morante


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
426 KB
Volume
17
Category
Article
ISSN
0921-5107

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πŸ“œ SIMILAR VOLUMES


Epitaxial silicon growth on porous silic
✍ C. Oules; A. Halimaoui; J.L. Regolini; R. Herino; A. Perio; D. Bensahel; G. Bomc πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 605 KB

Epitaxial growth of silicon on porous silicon layers has been obtained at a low temperature (820 Β°C) in a reduced pressure vapour phase epitaxy reactor, using Sill 4 as the reactive gas and a lampheating .Zvstem allowing rapid thermal processing. Silicon epitaxv has been studied on different porous