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Silicon nitride films deposited from SiH2Cl2NH3 by low pressure chemical vapor deposition: kinetics, thermodynamics, composition and structure

✍ Scribed by S.-L. Zhang; J.-T. Wang; W. Kaplan; M. Östling


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
881 KB
Volume
213
Category
Article
ISSN
0040-6090

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A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroÑuoric acid (BHF) were investigated using Ruth