Epitaxial silicon growth on porous silicon by reduced pressure, low temperature chemical vapour deposition

✍ Scribed by C. Oules; A. Halimaoui; J.L. Regolini; R. Herino; A. Perio; D. Bensahel; G. Bomchil

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 605 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90283-3

✦ Synopsis

Epitaxial growth of silicon on porous silicon layers has been obtained at a low temperature (820 °C) in a reduced pressure vapour phase epitaxy reactor, using Sill 4 as the reactive gas and a lampheating .Zvstem allowing rapid thermal processing. Silicon epitaxv has been studied on different porous layers formed on both highly doped (p~, n +) and lightly doped (12, n) substrates. As shown by cross-sectional transmi3:~ion electron microscopy observations, very good crystalline quali O' is obtained Jor epitaxial layers grown over p+-and n + -type porous layers, with the same defect densiO' as that obtained in epilayers grown in the same conditions on bulk silicon. However, the initial porosi O, of the layer appears to be a critical parameter, and a defect densi O' increase is observed if the porosity of the substrates exceeds 50%. In the case of lightly doped substrates, although single-crystal growth is actually obtained, a large defect densi O, is jound.