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First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

✍ Scribed by R. Rupp; P. Lanig; J. Völkl; D. Stephani


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
327 KB
Volume
146
Category
Article
ISSN
0022-0248

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