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Aluminium nitride films made by low pressure chemical vapour deposition: Preparation and properties

✍ Scribed by Y.G. Roman; A.P.M. Adriaansen


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
509 KB
Volume
169
Category
Article
ISSN
0040-6090

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A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroΓ‘uoric acid (BHF) were investigated using Ruth