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Diffusion of hydrogen in low pressure chemical vapour deposited silicon nitride films

✍ Scribed by W.M. Arnold Bik; R.N.H. Linssen; F.H.P.M. Habraken; W.F. van der Weg; A.E.T. Kuiper


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
199 KB
Volume
41
Category
Article
ISSN
0042-207X

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A silicon nitride Ðlm was deposited on an Si(100) substrate with a silicon dioxide surface layer from and NH 3 by low-pressure chemical vapour deposition under various conditions. The etching rates of the silicon SiH 2 Cl 2 nitride Ðlms by bu †ered hydroΓ‘uoric acid (BHF) were investigated using Ruth