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Polycrystalline Silicon–Germanium Films Prepared by Aluminum-Induced Crystallization

✍ Scribed by Qi, Jing; Yang, Yang; He, Deyan

Book ID
115538952
Publisher
The Electrochemical Society
Year
2008
Tongue
English
Weight
467 KB
Volume
155
Category
Article
ISSN
0013-4651

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Polycrystalline silicon germanium thin films prepared by aluminum-induced crystallization
✍ Iwasa, Takehiro ;Kaneko, Tetsuya ;Nakamura, Isao ;Isomura, Masao 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 574 KB

## Abstract The aluminum‐induced crystallization (AIC) of amorphous silicon germanium (a‐SiGe) was investigated in bilayer structure of aluminum (Al) and a‐SiGe at the eutectic temperature of Al–Ge system (420 °C) or higher temperature. Due to energy dispersive X‐ray spectroscopy (EDX) measurements