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Polycrystalline silicon thin films obtained by metal-induced crystallization

✍ Scribed by D. Dimova-Malinovska; O. Angelov; M. Kamenova; M. Sendova-Vassileva; A. Vaseashta

Book ID
111558004
Publisher
Springer US
Year
2003
Tongue
English
Weight
287 KB
Volume
14
Category
Article
ISSN
0957-4522

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## Abstract The aluminum‐induced crystallization (AIC) of amorphous silicon germanium (a‐SiGe) was investigated in bilayer structure of aluminum (Al) and a‐SiGe at the eutectic temperature of Al–Ge system (420 °C) or higher temperature. Due to energy dispersive X‐ray spectroscopy (EDX) measurements