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Solution-based metal induced crystallized polycrystalline silicon films and thin-film transistors

✍ Scribed by Shuyun Zhao; Zhiguo Meng; Chunya Wu; Shaozhen Xiong; Man Wong; Hoi Sing Kwok

Publisher
Springer US
Year
2007
Tongue
English
Weight
218 KB
Volume
18
Category
Article
ISSN
0957-4522

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πŸ“œ SIMILAR VOLUMES

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This paper investigates the crystallization of amorphous Si by using Al below eutectic temperature as a function of temperature on glass substrate. The crystalline structure from Raman spectroscopy represents amorphous phase of films perfectly changed to polycrystalline phase at the 450 1C. The rati

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## Abstract The aluminum‐induced crystallization (AIC) of amorphous silicon germanium (a‐SiGe) was investigated in bilayer structure of aluminum (Al) and a‐SiGe at the eutectic temperature of Al–Ge system (420 °C) or higher temperature. Due to energy dispersive X‐ray spectroscopy (EDX) measurements