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Polycrystalline silicon thin film made by metal-induced crystallization

✍ Scribed by Do Young Kim; M. Gowtham; Myung Suk Shim; Junsin Yi

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
377 KB
Volume
7
Category
Article
ISSN
1369-8001

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✦ Synopsis

This paper investigates the crystallization of amorphous Si by using Al below eutectic temperature as a function of temperature on glass substrate. The crystalline structure from Raman spectroscopy represents amorphous phase of films perfectly changed to polycrystalline phase at the 450 1C. The ratio of crystalline volume fraction was observed to increase from 48.63% to 68.28% as the time increases from 1 to 40 min. Crystalline structure was preferentially grown along the /1 1 1S orientation with the increase in time duration above the temperature of 450 1C. Also, the sheet resistance decreases with the increase of crystallinity because many Al contents are expensed due to the crystallization process.

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