This paper investigates the crystallization of amorphous Si by using Al below eutectic temperature as a function of temperature on glass substrate. The crystalline structure from Raman spectroscopy represents amorphous phase of films perfectly changed to polycrystalline phase at the 450 1C. The rati
β¦ LIBER β¦
Development of polycrystalline silicon films on flexible metallic substrates by aluminium induced crystallization
β Scribed by P. Prathap; A. Slaoui; C. Ducros; N. Baclet; P. L. Reydet
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 703 KB
- Volume
- 97
- Category
- Article
- ISSN
- 1432-0630
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