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Aluminum-induced crystallization of amorphous silicon–germanium thin films

✍ Scribed by Gjukic, M.; Buschbeck, M.; Lechner, R.; Stutzmann, M.

Book ID
120173859
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
463 KB
Volume
85
Category
Article
ISSN
0003-6951

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✍ Iwasa, Takehiro ;Kaneko, Tetsuya ;Nakamura, Isao ;Isomura, Masao 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 574 KB

## Abstract The aluminum‐induced crystallization (AIC) of amorphous silicon germanium (a‐SiGe) was investigated in bilayer structure of aluminum (Al) and a‐SiGe at the eutectic temperature of Al–Ge system (420 °C) or higher temperature. Due to energy dispersive X‐ray spectroscopy (EDX) measurements