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Study on amorphous silicon thin film by aluminum-induced crystallization

✍ Scribed by Minghua Li; Yong Liu; Yanghuan Lin; Xiaofeng Guo; Ruijiang Hong; Hui Shen

Book ID
113846527
Publisher
Elsevier
Year
2011
Tongue
English
Weight
301 KB
Volume
18
Category
Article
ISSN
1875-3892

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## Abstract The aluminum‐induced crystallization (AIC) of amorphous silicon germanium (a‐SiGe) was investigated in bilayer structure of aluminum (Al) and a‐SiGe at the eutectic temperature of Al–Ge system (420 °C) or higher temperature. Due to energy dispersive X‐ray spectroscopy (EDX) measurements

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