## Abstract The aluminumโinduced crystallization (AIC) of amorphous silicon germanium (aโSiGe) was investigated in bilayer structure of aluminum (Al) and aโSiGe at the eutectic temperature of AlโGe system (420โยฐC) or higher temperature. Due to energy dispersive Xโray spectroscopy (EDX) measurements
โฆ LIBER โฆ
Polycrystalline silicon thin films on glass by aluminum-induced crystallization
โ Scribed by Nast, O.; Brehme, S.; Neuhaus, D.H.; Wenham, S.R.
- Book ID
- 114537902
- Publisher
- IEEE
- Year
- 1999
- Tongue
- English
- Weight
- 219 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0018-9383
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