## Abstract The aluminumโinduced crystallization (AIC) of amorphous silicon germanium (aโSiGe) was investigated in bilayer structure of aluminum (Al) and aโSiGe at the eutectic temperature of AlโGe system (420โยฐC) or higher temperature. Due to energy dispersive Xโray spectroscopy (EDX) measurements
โฆ LIBER โฆ
Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization
โ Scribed by Shanglong Peng; Duokai Hu; Deyan He
- Book ID
- 116245123
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 696 KB
- Volume
- 258
- Category
- Article
- ISSN
- 0169-4332
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