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Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

โœ Scribed by Shanglong Peng; Duokai Hu; Deyan He


Book ID
116245123
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
696 KB
Volume
258
Category
Article
ISSN
0169-4332

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## Abstract The aluminumโ€induced crystallization (AIC) of amorphous silicon germanium (aโ€SiGe) was investigated in bilayer structure of aluminum (Al) and aโ€SiGe at the eutectic temperature of Alโ€“Ge system (420โ€‰ยฐC) or higher temperature. Due to energy dispersive Xโ€ray spectroscopy (EDX) measurements

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