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Thermoelectric effect of silicon films prepared by aluminum-induced crystallization

โœ Scribed by Qing-run Hou, Bing-fu Gu, Yi-bao Chen, Yuan-jin He

Book ID
118829859
Publisher
Springer-Verlag
Year
2012
Tongue
English
Weight
531 KB
Volume
19
Category
Article
ISSN
1674-4799

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Polycrystalline silicon germanium thin f
Polycrystalline silicon germanium thin films prepared by aluminum-induced crystallization
โœ Iwasa, Takehiro ;Kaneko, Tetsuya ;Nakamura, Isao ;Isomura, Masao ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 574 KB

## Abstract The aluminumโ€induced crystallization (AIC) of amorphous silicon germanium (aโ€SiGe) was investigated in bilayer structure of aluminum (Al) and aโ€SiGe at the eutectic temperature of Alโ€“Ge system (420โ€‰ยฐC) or higher temperature. Due to energy dispersive Xโ€ray spectroscopy (EDX) measurements