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Deterioration of aluminum induced crystallization of sputtered silicon by film stress

โœ Scribed by Ching-Ming Hsu; Ming-Chang Yu


Book ID
111546783
Publisher
Springer
Year
2003
Tongue
English
Weight
216 KB
Volume
22
Category
Article
ISSN
0261-8028

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Polycrystalline silicon germanium thin f
โœ Iwasa, Takehiro ;Kaneko, Tetsuya ;Nakamura, Isao ;Isomura, Masao ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 574 KB

## Abstract The aluminumโ€induced crystallization (AIC) of amorphous silicon germanium (aโ€SiGe) was investigated in bilayer structure of aluminum (Al) and aโ€SiGe at the eutectic temperature of Alโ€“Ge system (420โ€‰ยฐC) or higher temperature. Due to energy dispersive Xโ€ray spectroscopy (EDX) measurements