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Point defects in silicon carbide

✍ Scribed by Jürgen Schneider; Karin Maier

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
708 KB
Volume
185
Category
Article
ISSN
0921-4526

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✦ Synopsis

A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (Sic). Defect structures to be discussed include shallow nitrogen donors, group-III acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the silicon vacancy in Sic.

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Isothermal internal friction measurements reveal a relaxation peak in the temperature range 360-470 K for vibration frequencies between 10 -~ and 10 Hz. The temperature range and the fact that the relaxation parameters are not sensitive to the structural state of the specimens indicate a point defec