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Defect structure and polytypism in silicon carbide


Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
190 KB
Volume
3
Category
Article
ISSN
0038-1098

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Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been