Defect structure of 4H silicon carbide ingots

✍ Scribed by A.O. Lebedev; D.D. Avrov; A.V. Bulatov; S.I. Dorozhkin; Yu.M. Tairov; A.Yu. Fadeev

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 415 KB
• Volume: 318
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.10.166

✦ Synopsis

Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been analyzed. Antiphase domains of the 4H polytype emerging at the top and lateral sides of 15R inclusion form a strictly determined set of binary and ternary joints (extended threading defects). Junctions of a higher order could generate open-core threading superdefects.