Investigation of growth processes of ingots of silicon carbide single crystals
โ Scribed by Yu.M. Tairov; V.F. Tsvetkov
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 365 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0022-0248
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๐ SIMILAR VOLUMES
In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra
of Physics, Department of Semiconductor8 and Leningrad Order of Lenin Electrical Engineering Institute named &er V. I. Ulyanov (Lenin). Department of Dielectrics and Semiconductors ## Investigation of Nitrogen Solubility Process in Silicon Carbide On the basis of the epitaxial layers of Sic (N) g