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Muonium transitions in 4H silicon carbide

โœ Scribed by Y.G. Celebi; R.L. Lichti; H.N. Bani-Salameh; A.G. Meyer; B.R. Carroll; J.E. Vernon; P.J.C. King; S.F.J. Cox


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
428 KB
Volume
404
Category
Article
ISSN
0921-4526

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Muonium in 4H silicon carbide
โœ Y.G. Celebi; R.L. Lichti; B.R. Carroll; P.J.C. King; S.F.J. Cox ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 368 KB
Defect structure of 4H silicon carbide i
โœ A.O. Lebedev; D.D. Avrov; A.V. Bulatov; S.I. Dorozhkin; Yu.M. Tairov; A.Yu. Fade ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 415 KB

Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been