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Muonium in 4H silicon carbide

โœ Scribed by Y.G. Celebi; R.L. Lichti; B.R. Carroll; P.J.C. King; S.F.J. Cox

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
368 KB
Volume
404
Category
Article
ISSN
0921-4526

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Muonium transitions in 4H silicon carbid
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โœ Y.G. Celebi; R.L. Lichti; H.N. Bani-Salameh; A.G. Meyer; B.R. Carroll; J.E. Vern ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 428 KB
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Defect structure of 4H silicon carbide ingots
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Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been