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Charge-state transitions of muonium in 6H silicon carbide

✍ Scribed by H.N. Bani-Salameh; A.G. Meyer; B.R. Carroll; R.L. Lichti; Y.G. Celebi; K.H. Chow; P.J.C. King; S.F.J. Cox


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
159 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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Due to the higher vapour pressure of silicon, silicon carbide surfaces annealed at high temperature under vacuum tend to graphitize. The comparison of graphite formation on the silicon and carbon terminations of 6H-SiC reveals significant differences in the graphitization mechanisms involved. The co