In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron
β¦ LIBER β¦
Implantation-induced defects in silicon carbide
β Scribed by G Pensl; T Frank; M Krieger; M Laube; S Reshanov; F Schmid; M Weidner
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 377 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Defect production and annealing in ion i
β
A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch
π
Article
π
1995
π
Elsevier Science
π
English
β 375 KB
Process-Induced Morphological Defects in
β
J. A. Powell; D. J. Larkin
π
Article
π
1997
π
John Wiley and Sons
π
English
β 647 KB
Point defects in silicon carbide
β
JΓΌrgen Schneider; Karin Maier
π
Article
π
1993
π
Elsevier Science
π
English
β 708 KB
A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (Sic). Defect structures to be discussed include shallow nitrogen donors, group-III acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the si
Temperature-induced phase development in
β
R.G. Vardiman
π
Article
π
1994
π
Elsevier Science
π
English
β 788 KB
Internal friction study of ion-implantat
β
Xiao Liu; R.O. Pohl; D.M. Photiadis
π
Article
π
2006
π
Elsevier Science
π
English
β 294 KB
Intrinsic Defects in Cubic Silicon Carbi
β
Itoh, H. ;Kawasuso, A. ;Ohshima, T. ;Yoshikawa, M. ;Nashiyama, I. ;Tanigawa, S.
π
Article
π
1997
π
John Wiley and Sons
π
English
β 431 KB