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Point defect relaxation in silicon single crystals

✍ Scribed by P. Gadaud; J. Woirgard

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
210 KB
Volume
110
Category
Article
ISSN
0921-5093

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✦ Synopsis

Isothermal internal friction measurements reveal a relaxation peak in the temperature range 360-470 K for vibration frequencies between 10 -~ and 10 Hz. The temperature range and the fact that the relaxation parameters are not sensitive to the structural state of the specimens indicate a point defect relaxation mechanism. Since the controlled defects in the bulk cannot explain the relatively high relaxation strength observed, we propose a mechanism based on stress-induced self-interstitial reorientation, this type of defect being the only one to be present in a sufficiently high concentration in our samples.

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