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Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

✍ Scribed by Goswami, A.; Trew, R.J.; Bilbro, G.L.

Book ID: 120024705
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 533 KB
Volume: 80
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.10.005

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