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Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al 2 O 3 /Si 3 N 4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors

✍ Scribed by Wang, Chengxin; Maeda, Narihiko; Hiroki, Masanobu; Yokoyama, Haruki; Watanabe, Noriyuki; Makimoto, Toshiki; Enoki, Takotomo; Kobayashi, Takashi

Book ID: 126166028
Publisher: Institute of Pure and Applied Physics
Year: 2006
Tongue: English
Weight: 148 KB
Volume: 45
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.40

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