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Systematic Study of Insulator Deposition Effect (Si 3 N 4 , SiO 2 , AlN, and Al 2 O 3 ) on Electrical Properties in AlGaN/GaN Heterostructures

✍ Scribed by Maeda, Narihiko; Hiroki, Masanobu; Watanabe, Noriyuki; Oda, Yasuhiro; Yokoyama, Haruki; Yagi, Takuma; Makimoto, Toshiki; Enoki, Takatomo; Kobayashi, Takashi

Book ID: 124089497
Publisher: Institute of Pure and Applied Physics
Year: 2007
Tongue: English
Weight: 248 KB
Volume: 46
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.547

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