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Electrical insulation properties of sputter-deposited SiO2, Si3N4and Al2O3films at room temperature and 400 °C

✍ Scribed by Bartzsch, Hagen ;Glöß, Daniel ;Frach, Peter ;Gittner, Matthias ;Schultheiß, Eberhard ;Brode, Wolfgang ;Hartung, Johannes

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
806 KB
Volume
206
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

In this paper the breakdown field strength and resistivity of sputter‐deposited Al~2~O~3~, SiO~2~ and Si~3~N~4~ layers are investigated in the temperature range between room temperature and 400 °C. All the investigated layers showed excellent insulation properties, even at elevated sample temperature. One example of industrial application is the deposition of electrical insulation layers onto the membranes of pressure sensors using cluster type sputter equipment

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