Electrically insulating Al2O3 and SiO2 films for sensor and photovoltaic applications deposited by reactive pulse magnetron sputtering, hollow cathode arc activated deposition and magnetron-PECVD
✍ Scribed by P. Frach; H. Bartzsch; D. Glöß; M. Fahland; F. Händel
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 380 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0257-8972
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✦ Synopsis
Pressure sensor CIS/CIGS photovoltaics
Electrically insulating films find wide applications in electronics, sensor and medical technology as well as in photovoltaics. This paper describes the deposition of Al 2 O 3 and SiO 2 films using reactive pulse magnetron sputtering, hollow cathode arc activated deposition and Magnetron-PECVD. The deposition rate of these processes ranges between 1 and 4 nm/s in stationary mode and between 80 and 1000 nm m/min in dynamic mode. Breakdown field strength values between 1 and 9 MV/cm were achieved for the as-deposited Al 2 O 3 and SiO 2 films. The resistivity of the sputtered films is between 10 + 15 and 10 + 17 Ω cm. In the case of SiO 2 films, considerably higher resistivity and breakdown field strength were obtained for process conditions with high plasma density and hence increased energetic substrate bombardment. Example applications of the SiO 2 and Al 2 O 3 films are metal membrane based pressure sensors and CIS/CIGS photovoltaics on metal strips.