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Physical origin of dipole formation at high-k/SiO[sub 2] interface in metal-oxide-semiconductor device with high-k/metal gate structure

✍ Scribed by Wang, Xiaolei; Han, Kai; Wang, Wenwu; Chen, Shijie; Ma, Xueli; Chen, Dapeng; Zhang, Jing; Du, Jun; Xiong, Yuhua; Huang, Anping

Book ID: 120419461
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 351 KB
Volume: 96
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3399359

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