✦ LIBER ✦
The electrical and physical analysis of Pt gate/Al2O3/p-Si (100) with dual high-k gate oxide thickness for deep submicron complementary metal-oxide-semiconductor device with low power and high reliability
✍ Scribed by Chihoon Lee; Sang Yong No; Da Il Eom; Cheol Seong Hwang; Hyeong Joon Kim
- Book ID
- 107453487
- Publisher
- Springer US
- Year
- 2005
- Tongue
- English
- Weight
- 186 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0361-5235
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