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Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-kâSiO[sub 2] interface

✍ Scribed by Iwamoto, Kunihiko; Kamimuta, Yuuichi; Ogawa, Arito; Watanabe, Yukimune; Migita, Shinji; Mizubayashi, Wataru; Morita, Yukinori; Takahashi, Masashi; Ota, Hiroyuki; Nabatame, Toshihide; Toriumi, Akira

Book ID: 120419454
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 329 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2904650

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Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-kâSiO[sub 2] interface

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-kâSiO[sub 2] interface