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Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors

✍ Scribed by Nakajima, Yasuyuki; Horiguchi, Seiji; Shoji, Masanari; Omura, Yasuhisa

Book ID: 120586086
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 479 KB
Volume: 83
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.367271

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