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Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors

✍ Scribed by Lee, Eungkyu; Ko, Jieun; Lim, Keon-Hee; Kim, Kyongjun; Park, Si Yun; Myoung, Jae M.; Kim, Youn Sang

No coin nor oath required. For personal study only.

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