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Differential-Mode Biosensor Using Dual Extended-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

✍ Scribed by Choi, Jinhyeon; Lee, Hee Ho; Ahn, Jungil; Seo, Sang-Ho; Shin, Jang-Kyoo


Book ID
120346707
Publisher
Institute of Pure and Applied Physics
Year
2012
Tongue
English
Weight
851 KB
Volume
51
Category
Article
ISSN
0021-4922

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The metal-oxide-semiconductor (MOS) field effect transistor (FET) using 'oxidized µc-Si/ultrathin oxide' gate structure was studied. It was found that this structure shows negative differential resistance behavior, which can be explained by the Coulomb blockade effect of trapped carriers and immedia