𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Photoluminescence studies of CuInSe2: Identification of intrinsic defect levels

✍ Scribed by Fouad Abou-Elfotouh; D.J. Dunlavy; David Cahen; R. Noufi; L.L. Kazmerski; K.J. Bachmann

Publisher
Elsevier Science
Year
1984
Weight
274 KB
Volume
10
Category
Article
ISSN
0146-3535

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Characterization of Intrinsic Defect Lev
Characterization of Intrinsic Defect Levels in CuInS2
✍ SchΓΆn, J. H. ;Bucher, E. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 210 KB πŸ‘ 2 views

Electrical and photoluminescence measurements have been carried out on chemical vapor transport grown CuInS 2 single crystals in order to determine intrinsic defect levels in this material. Post-growth treatments, like annealing in vacuum, air, Cu-, In, and S-atmosphere were used to identify the obs

Study of deep levels in CuInSe2 by deep
Study of deep levels in CuInSe2 by deep level transient spectroscopy measurements on CdS/CuInSe2 solar cells
✍ N. Christoforou; J.D. Leslie; S. Damaskinos πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science βš– 906 KB

This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce