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Characterization of Intrinsic Defect Levels in CuInS2

✍ Scribed by Schön, J. H. ;Bucher, E.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 210 KB
Volume: 171
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199902)171:2<511::aid-pssa511>3.0.co;2-b

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✦ Synopsis

Electrical and photoluminescence measurements have been carried out on chemical vapor transport grown CuInS 2 single crystals in order to determine intrinsic defect levels in this material. Post-growth treatments, like annealing in vacuum, air, Cu-, In, and S-atmosphere were used to identify the observed electronic defect levels. Using these data, the formation energy of the intrinsic point defects, and the stoichiometry of the samples a band diagram for defect levels in CVTgrown CuInS 2 single crystals is proposed. Moreover similarities and differences to related ternary chalcopyrite compounds, like CuInSe 2 and CuGaSe 2 , are discussed and pointed out.

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