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Characterization of CuIn(Ga)Se2 Thin Films

✍ Scribed by Dirnstorfer, I. ;Wagner, Mt. ;Hofmann, D. M. ;Lampert, M. D. ;Karg, F. ;Meyer, B. K.

Publisher: John Wiley and Sons
Year: 1998
Tongue: English
Weight: 225 KB
Volume: 168
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199807)168:1<163::aid-pssa163>3.0.co;2-t

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✦ Synopsis

In-rich CuIn(Ga)Se 2 thin films are characterized by optical and electrical measurements. The results are consistently explained in the Shklovskij/Efros model appropriate for highly defective and highly compensated semiconductors. The dominant radiative recombination is of tail-impurity type at low temperatures and low excitation powers, and of band-impurity type at high temperatures and/or high excitation densities. The analysis of the data yields that the impurity content is in the order of 10 18 cm À3 while the free carrier (hole) concentration at room temperature is in the order of 10 16 cm À3 . The impurity density increases with increasing deviation of the Cu/(In+Ga) ratio from stoichiometry.

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