In-rich CuIn(Ga)Se 2 thin films are characterized by optical and electrical measurements. The results are consistently explained in the Shklovskij/Efros model appropriate for highly defective and highly compensated semiconductors. The dominant radiative recombination is of tail-impurity type at low
Characterization of CuIn(Ga)Se2 Thin Films
β Scribed by Wagner, Mt. ;Hofmann, D. M. ;Dirnstorfer, I. ;Lampert, M. D. ;Karg, F. ;Meyer, B. K.
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 205 KB
- Volume
- 168
- Category
- Article
- ISSN
- 0031-8965
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