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Studies on sulfur diffusion into Cu(In,Ga)Se2 thin films

✍ Scribed by B. M. Başol; A. Halani; C. Leidholm; G. Norsworthy; V. K. Kapur; A. Swartzlander; R. Matson

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
374 KB
Volume
8
Category
Article
ISSN
1062-7995

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✦ Synopsis

A systematic study was carried out to investigate the distribution of sulfur (S) in CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) absorbers which were exposed to an H 2 S atmosphere at elevated temperature. Results demonstrated that S diusion into CIS layers was a strong function of the original stoichiometry of the absorber before sulfurization. Sulfur inclusion into Cu-rich CIS ®lms was much more favorable compared to S diusion in Cu-poor layers. The sulfur distribution pro®le was also strongly in¯uenced by the micro-structure of the original CIS and CIGS layers, with sections of the ®lms with smaller grains accommodating more S.

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