13·7%-Efficient Zn(Se,OH)x/Cu(In,Ga)(SSe)2 thin-film solar cell

✍ Scribed by A. Ennaoui; U. Blieske; M. Ch. Lux-Steiner

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 145 KB
• Volume: 6
• Category: Article
• ISSN: 1062-7995
• DOI: 10.1002/(sici)1099-159x(199811/12)6:6<447::aid-pip245>3.0.co;2-a

✦ Synopsis

Cu(In,Ga)Se 2 (CIGS) and related semiconducting compounds have demonstrated their high potential for high-eciency thin-®lm solar cells. The highest eciency for CIGS-based thin-®lm solar cells has been achieved with CdS buer layers prepared by a solution growth method known as chemical bath deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-®lm solar cells, Zn(Se,OH) x buer layers were deposited by CBD on polycrystalline Cu(In,Ga)(S,Se) 2 (CIGSS). A total-area conversion eciency of 13 . 7% was certi®ed by the Frauenhofer Institute for Solar Energy Systems. The CIGSS absorber was fabricated by Siemens Solar Industries (California). For device optimization, the thickness and good surface coverage were controlled by XPS±UPS photoemission spectroscopy. A Zn(Se,OH) x thickness below 7 nm has been found to be optimum for achieving a homogeneous and compact buer ®lm on CIGSS, with open-circuit photovoltage V oc 535 mV, ®ll factor FF 70 . 76% and a high short-circuit photocurrent density J sc 36 . 1 mA cm À2 .