Temperature-resolved photoluminescence studies of CuInSe2
✍ Scribed by Jüri Krustok; Jaan Mädasson; Kari Hjelt; Heikki Collan
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 384 KB
- Volume
- 94
- Category
- Article
- ISSN
- 0038-1098
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Tlme-resolved photolumlneseence spectra of InSe at superfluld He temperatures show that one broad lumlnesoence feature centred at 1315meV is due to donor-acceptor pair recombination whereas other, /ower energy broad bands are not. The sharp lines around 1333meV were identified as bound exclton lumin
We present results of time-resolved photoluminescence experiments performed at 77 K on a GaInAs/AlGaInAs superlattice grown by molecular beam epitaxy and lattice matched to an InP substrate. The superlattice is the intrinsic part of a p-i-n diode. Photoluminescence spectra, reconstructed at various